GATE DRIVER HALF-BRIDGE 600V 8SOIC


Bypass caps, pull-ups, strapping resistors, custom silkscreen & more
Design a Custom BoardHigh-voltage gate driver IC for dual N-channel MOSFETs or IGBTs in half-bridge configurations. Provides independent high-side and low-side drive outputs with 250mA/500mA source/sink capability, 10-20V supply range, and integrated 100ns dead-time protection. Supports up to 600V operation with 50V/nsec dV/dt immunity and 3.3V/5V logic inputs.
An 8-pin SOIC with 1.27mm pitch is too fine for breadboards and hand-soldering without a microscope. A breakout board routes these pins to standard 0.1" headers, enabling rapid prototyping and reliable connections for op-amps, transceivers, and small power MOSFETs without requiring reflow equipment.
ELECTRICAL CHARACTERISTICS
| Manufacturer | onsemi |
| Part Number | NCP5106BDR2G |
| Package | SOIC-8 (3.9×4.9mm) |
| Pin Count | 8 |
| Channel Type | Independent |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Input Type | Non-Inverting |
| Number of Drivers | 2 |
| Rise / Fall Time (Typ) | 85ns, 35ns |
| Voltage - Supply | 10V ~ 20V |
BILL OF MATERIALS
PCB SPECIFICATIONS